![]() ![]() ![]() Our results are helpful for understanding the quantum transport properties of SnTe. (a) The weak antilocalization phase coherence length (AL) and the weak localization phase coherence length (L) as functions of for weak (so 10000nm) and strong (so 300nm). Meanwhile, as the temperature decreases, the temperature dependence of phase coherence length gradually changes from l ϕ∼ T −1 to l ϕ∼ T −0.5, suggesting that the dominant mechanism of phase decoherence switches from electron–phonon scattering to electron–electron scattering. A close analysis of the WAL data shows that the number of transport channels contributing to WAL increases monotonously with decreasing temperatures, reaching N=2.8 at T=1.6 K in one of the devices, which indicates the decoupling of Dirac cones at low temperatures. Due to the polycrystalline nature and the relatively low mobility of the films, the background of conventional magnetoresistance was greatly suppressed, and clean WAL signals, which are well described by the Hikami–Larkin–Nagaoka equation, were obtained at low temperatures. In this article, we present our study on WAL in polycrystalline SnTe films deposited by magnetron sputtering. Previous works on weak antilocalization (WAL) of SnTe were mostly carried out in MBE-grown films, where the signals of WAL usually coexist with a large parabolic background of classical magnetoresistance. The electron interference can be significantly modified if spin. Xiaodong Li 1, Yang Yang 1, Xiaocui Wang 2,3, Peng Zhu 2, Fanming Qu 3, Zhiwei Wang 2 and Fan Yang 1,*ġ Center for Joint Quantum Studies and Department of Physics, School of Science, Tianjin University, Tianjin 300350, ChinaĢ Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, Chinaģ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China This so- called weak localization effect can even be observed in macroscopic structures. an angular dependence of the phase-coherence length is antilcalization effect. In the presence of strong intervalley scattering and correlations, we expect a crossover from the weak antilocalization to weak localization. We aim to outline the current challenges and suggest how future work will be geared towards developing spin qubits in 2D materials.Weak Antilocalization in Polycrystalline SnTe Films Deposited by Magnetron Sputtering Metrics - Weak antilocalization, spinorbit interaction, and phase. The weak antilocalization always dominates the magnetoconductivity near zero field, thus gives one of the transport signatures for Weyl semimetals. Information on phase-coherence can be obtained by analyzing transport phenomena such as weak (anti)localization and universal conductance fluctuations in structures of the according length scale 24. In the second part of this article, we extend our discussion to TMDs and TI nanostructures. Subsequently, a historical review of experimental development in this field is presented, from the early demonstration of graphene nanodevices on SiO2 substrate to more recent progress in utilizing hexagonal boron nitride to reduce substrate disorder. We supply the entry-level knowledge for this field by first introducing the fundamental properties of 2D bulk materials followed by the theoretical background relevant to the physics of nanostructures. But the phase coherence length can reach up to 100nm to 1 m below the liquid helium temperature. 49 However, these topological materials require clean and ordered crystal phases for time-reversal symmetry to be induced. Magnetoconductivity measurements of SnTe films reveal a coexistence of weak antilocalization, consistent with topologically non-trivial states, and weak localization, consistent with trivial states from the bulk. In this article, we review a selection of transport studies addressing the confinement and manipulation of charges in nanostructures fabricated from various 2D materials. Applying a strong perpendicular magnetic field can break this symmetry, giving rise to the well-known property of weak antilocalization (WAL). Nanostructures made of these materials are also viable for use in quantum computing applications involving the superposition and entanglement of individual charge and spin quanta. The surface states of topological insulators (TIs) exhibit a spin–momentum locking that opens up the possibility of controlling the spin degree of freedom in the absence of an external magnetic field. Graphene is a robust material for spintronics owing to its weak spin–orbit and hyperfine interactions, while monolayer transition metal dichalcogenides (TMDs) possess a Zeeman effect-like band splitting in which the spin and valley degrees of freedom are nondegenerate. Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. ![]()
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